1200-V SiC modules enable direct upgrades

Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions. Based on the company’s latest generation of SiC MOSFETs, the modules deliver higher efficiency in medium- to high-frequency automotive, energy, industrial, and telecom applications.

The VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 power modules are available in single-switch and low-side chopper configurations. Each module’s SiC MOSFET integrates a soft body diode with low reverse recovery. This reduces switching losses and improves efficiency in solar inverters and EV chargers, as well as server, telecom, and industrial power supplies.

The modules support drain currents from 50 A to 200 A. The VS-SF50LA120 is a 50-A low-side chopper with 43-mΩ R_DS(on), while the VS-SF50SA120 is a 50-A single-switch device rated at 47 mΩ. Single-switch options scale to 100 A, 150 A, and 200 A with R_DS(on) values of 23 mΩ, 16.8 mΩ, and 12.1 mΩ, respectively.

Samples and production quantities of the VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 are available now, with lead times of 13 weeks.

Vishay Intertechnology 

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