TO-247 SiC package boosts high-voltage isolation

Navitas has developed a TO-247 package offering more than 6000 V of isolation for its 1200-V, 2300-V, and 3300-V SiC MOSFETs. Designated the UHV-TO-247-4-ISO, the through-hole package supports direct-cooled thermal management through a reflow-compatible isolated thermal pad. It also provides over 12 mm of pin-to-pin creepage, enabling module-level performance in a compact discrete form factor.

Compared to standard non-isolated through-hole packages, the UHV-TO-247-4-ISO reduces the need for external high-voltage isolation while improving thermal and EMI performance. These benefits extend to high-voltage grid-tied power conversion systems, solid-state transformers, battery energy storage systems, and renewable energy applications.

The UHV-TO-247-4-ISO delivers integrated high-voltage isolation using an AlN substrate, reducing die-to-heatsink capacitance and helping lower common-mode noise and radiated EMI. Its reflow-compatible, direct-cooled thermal interface enables direct mounting to liquid- or air-cooled heatsinks, improving thermal performance while eliminating the need for external TIM and isolation materials. The package also enhances thermal cycling and power cycling lifetime through its AlN/AMB construction and robust heatsink interface.

To request samples or additional product information, please contact a Navitas sales representative or email info@navitassemi.com.

Navitas Semiconductor 

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