Infineon expands GaN transistor portfolio

Infineon has launched the CoolGaN Drive family, featuring single switches and half-bridges with integrated drivers for compact, efficient designs. The family includes CoolGaN Drive 700-V G5 single switches, which integrate a transistor and gate driver in PQFN 5×6 and PQFN 6×8 packages. It also offers CoolGaN Drive HB 600-V G5 devices, which combine two transistors with high-side and low-side gate drivers in a LGA 6×8 package.

Depending on the product group, CoolGaN Drive components include a bootstrap diode, loss-free current measurement, and adjustable dV/dt. They also provide overcurrent, overtemperature, and short-circuit protection.

These devices support higher switching frequencies, leading to smaller, more efficient systems with reduced BoM, lower weight, and a smaller carbon footprint. The GaN HEMTs are suitable for longer-range e-bikes, portable power tools, and lighter-weight household appliances, such as vacuums, fans, and hairdryers.

Samples of the half-bridge devices are available now. Single-switch samples will be available starting Q4 2024. For more information about Infineon’s GaN HEMT lineup, click here.

Infineon Technologies 

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