650-V GaN HEMT resides in TOLL package

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, supports high current, and enables strong switching performance.

The GNP2070TD-Z integrates second-generation GaN-on-Si technology, achieving an R_DS(on) of 70 mΩ and a Q_g of 5.2 nC. With a V_DS of 650 V and an I_DS of 27 A, the transistor is well-suited for power supplies, AC adapters, PV inverters, and energy storage systems.

For this launch, ROHM has outsourced package manufacturing to ATX Semiconductor, with TSMC handling front-end processes and ATX managing back-end processes. ROHM also plans to collaborate with ATX on automotive-grade GaN devices.

The EcoGaN HEMTs will be available starting in March from DigiKey, Mouser, and Farnell.

GNP2070TD-Z product page

Rohm Semiconductor

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