SiC power modules deliver up to 608 A

SemiQ continues to expand its Gen3 QSiC MOSFET portfolio with 1200-V power modules offering high current density and low thermal resistance. The new seven-device lineup includes high-current S3 half-bridge, B2T1 six-pack, and B3 full-bridge modules designed to meet the needs of EV chargers, energy storage systems, and industrial motor drives.

Two of the devices handle currents up to 608 A with a junction-to-case thermal resistance of just 0.07 °C/W in a 62‑mm S3 half-bridge format. The three six-pack modules integrate a three-phase power stage into a compact housing, offering on-resistance from 19.5 mΩ to 82 mΩ, an optimized layout, and minimal parasitic effects. The two full-bridge modules combine current handling up to 120 A with on-resistance as low as 8.6 mΩ and a thermal resistance of 0.28 °C/W.

All parts undergo wafer-level gate-oxide burn-in and are breakdown-tested above 1350 V. Gen3 modules operate at lower gate voltages (18 V/-4.5 V) and reduce both on-resistance and turn-off energy losses up to 30% versus previous generations.

The power modules are available immediately. Explore SemiQ’s entire line of Gen3 MOSFET power modules here.

SemiQ

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