SiC MOSFETs cut switching losses and resistance
SemiQ has launched 750-V and 1200-V Gen4 QSiC MOSFETs which the company says reduce on-resistance by 21% and switching energy by 11%. The post SiC MOSFETs cut switching losses and resistance appeared first on EDN.
SemiQ has launched 750-V and 1200-V Gen4 QSiC MOSFETs which the company says reduce on-resistance by 21% and switching energy by 11% over Gen3 devices. The 750-V GP4T009A075 and 1200-V GP4T011A120 feature on-resistances of 9 mΩ and 11 mΩ, respectively. Offered in in TO-247-4L packages and bare die, the power devices are well suited for use in EV chargers, solar inverters, industrial drives, and high-voltage DC/DC and DC/AC converters.
Gen4 technology uses an optimized cell topology with a 36% reduction in cell pitch compared with previous generations. The 1200-V SiC MOSFET provides enhanced conduction and switching performance, reducing total switching energy to 1491 µJ while maintaining the same 5×5-mm die size as Gen3 1200-V devices. The 750-V SiC MOSFET, unavailable in previous generations, achieves total switching energy that is just 871 µJ.
The 750-V and 1200-V Gen4 MOSFET dies undergo wafer-level gate-oxide burn-in screening at voltages exceeding 800 V and 1400 V, respectively. Both are avalanche-tested to 800 mJ.
All four part numbers are available immediately. The H suffix denotes the TO-247-4L package, while the X suffix denotes bare die.
The post SiC MOSFETs cut switching losses and resistance appeared first on EDN.
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