Samsung leads with HBM4 DRAM performance

Samsung has begun mass production and commercial shipments of its HBM4 DRAM, marking what it describes as an industry first. Built on Samsung’s 6th-generation 10-nm-class DRAM process with a 4-nm logic base die, this high-bandwidth memory is optimized for performance, reliability, and energy efficiency in AI, HPC, and datacenter applications.

Samsung’s HBM4 delivers a consistent transfer speed of 11.7 Gbps — roughly 46% faster than the 8-Gbps industry standard and a 1.22× improvement over the 9.6-Gbps maximum of HBM3E. Memory bandwidth per single stack reaches up to 3.3 TB/s, a 2.7× increase over HBM3E. Current 12-layer stacking enables capacities from 24 GB to 36 GB, with future 16-layer stacks projected to expand offerings up to 48 GB.

To handle the doubled data I/Os from 1024 to 2048 pins, advanced low-power techniques were applied to the core die. Samsung’s HBM4 improves power efficiency by 40% via low-voltage TSVs and optimized power distribution, offers 10% better thermal resistance, and increases heat dissipation by 30% over HBM3E, ensuring reliable high-performance operation.

For more details on this announcement, see Samsung’s press release. Explore the broader HBM portfolio here.

Samsung Semiconductor 

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