Page EEPROM boasts flash-like speed

ST has launched a page EEPROM that provides the speed and density typical of serial flash, combined with the byte-level flexibility of EEPROM. The SPI page EEPROM family offers densities of 8 Mbits, 16 Mbits, and 32 Mbits, significantly increasing storage compared to standard EEPROMs. These devices can be used in wearables, healthcare devices, asset trackers, e-bikes, and other industrial and consumer products.

Embedded smart page management allows byte-level write operations for processes like data logging, while also supporting page/sector/block erase and page programming up to 512 bytes for handling firmware OTA updates. The devices also offer buffer loading, which can program several pages simultaneously. The data-read speed of 320 Mbps is about 16 times faster than standard EEPROM, while write-cycle endurance of 500,000 cycles is several times higher than conventional serial flash.

With peak current control, page EEPROM minimizes power supply noise and prolongs the runtime of battery-operated equipment. According to ST, the write current is below that of many conventional EEPROMs, and there is a deep power-down mode with fast wakeup that reduces the current to below 1 µA.

The M95P08, M95P16, and M95P32 page EEPROMs are in production now, with prices starting at $0.50 for the 8-Mbit MP95P08.

STMicroelectronics

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