GaN power packages improve thermal resistance

Fabless semiconductor firm CGD announced two packages for its ICeGaN family of GaN power ICs that enhance thermal performance. Both are variants of the dual-flat no-leads (DFN) package and will debut at this month’s PCIM Europe exhibition.

The DHDFN-9-1, or dual heat-spreader DFN, is a thin 10×10-mm package featuring dual-side cooling. Wettable flanks enable more reliable optical inspection. This package supports bottom-side, top-side, and dual-side cooling, outperforming the TOLT package, particularly in top-side and dual-side cooled configurations. Additionally, a dual-gate pinout simplifies PCB layout and paralleling, enabling applications up to 6 kW.

The BHDFN-9-1, or bottom heat-spreader DFN, provides bottom-side cooling and wettable flanks. According to CGD, this package has a thermal resistance of 0.28 K/W, matching or exceeding other leading devices. Despite being smaller than a TOLL package, the 10×10-mm BHDFN package shares a similar footprint. This allows a common layout with TOLL-packaged GaN power ICs, simplifying use and evaluation.

ICeGaN power transistors operate with standard silicon gate drivers and do not require negative voltages for shutdown. They can be used in servers, data centers, inverters, motor drives, and other industrial applications.

Cambridge GaN Devices 

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