2-in-1 SiC module raises power density

Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal design lowers on-resistance. Package enhancements cut thermal resistance by roughly 15% and reduce inductance by about 50% compared with standard TO-247 devices. Rohm reports a 2.3× increase in power density in a half-bridge configuration, enabling the same conversion capability in nearly half the volume.

The 750-V and 1200-V devices target industrial power systems such as PV inverters, UPS units, and semiconductor relays, and are offered in half-bridge and common-source configurations. While two-level inverters remain standard, demand is growing for multi-level circuits—including three-level NPC, three-level T-NPC, and five-level ANPC—to support higher voltages. These advanced topologies often require custom designs with standard SiC packages due to the complexity of combining half-bridge and common-source configurations.

Rohm addresses this challenge with standardized 2-in-1 modules supporting both topologies, providing greater flexibility for NPC circuits and DC/DC converters. This approach reduces component count and board space, enabling more compact designs compared with discrete solutions.

Devices in the 750-V SC740xxDT series and 1200-V SCZ40xxKTx series are available now in OEM quantities. Samples of AEC-Q101 qualified products are scheduled to begin in October 2025.

Rohm Semiconductor 

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