SiC power modules gain low-resistance options

SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while GCMX types rely on the intrinsic body diode.

The modules are designed for medium-voltage, high-power systems such as battery chargers, photovoltaic inverters, server power supplies, and energy storage units. Each device undergoes wafer-level gate-oxide burn-in testing above 1400 V and avalanche testing to 800 mJ (330 mJ for 34-mΩ types).

The 7.4-mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ turn-on, 0.94 mJ turn-off) and features a body-diode reverse-recovery charge of 593 nC. Junction-to-case thermal resistance ranges from 0.23 °C/W for the 7.4-mΩ device to 0.70 °C/W for the 34-mΩ module.

All models have a rugged, isolated backplate for direct heat-sink mounting. Samples and volume pricing are available upon request. For more information about the 1200-V Gen3 SiC MOSFET modules, click here.

SemiQ

The post SiC power modules gain low-resistance options appeared first on EDN.