IR emitting diode boosts radiant intensity

The TSHF5211, an 890-nm infrared emitting diode from Vishay, delivers a typical radiant intensity of 235 mW/sr at a drive current of 100 mA. According to the manufacturer, this represents a 50% increase over previous-generation devices.

Based on a surface emitter chip, the TSHF5211 offers a temperature coefficient of V_F of -1.0 mV/K. It also provides a narrow ±10° half angle of intensity and switching times of 15 ns. These features make the high-intensity emitter well-suited for smoke detectors and industrial sensors, as it enables good spectral matching with silicon photodetectors in these applications.

The TSHF5211 IR emitting diode is housed in a clear, untinted leaded plastic package. Samples and production quantities are available now, with lead times of 20 weeks for large orders.

TSHF5211 product page 

Vishay Intertechnology 

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