High-voltage SiC MOSFETs power critical energy systems

Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known-good-die (KGD) formats. Leveraging fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology, these ultra-high-voltage devices offer improved reliability and performance for mission-critical energy-infrastructure applications.

According to Navitas, the TAP architecture uses a multistep electric-field management profile that significantly reduces voltage stress and improves blocking performance compared with trench and conventional planar SiC MOSFETs. In addition to increased long-term reliability and avalanche robustness, TAP incorporates an optimized source contact that enables higher cell-pitch density and improved current spreading. Together, these advances deliver better switching figures of merit and lower on-resistance at elevated temperatures.

Packaging options include the SiCPAK G+ power module, which uses epoxy-resin potting to deliver more than a 60% improvement in power-cycling lifetime and over a 10% improvement in thermal-shock reliability compared with similar silicone-gel–potted designs. Discrete SiC MOSFETs are offered in TO-247 and TO-263-7 packages, while KGD products provide system manufacturers with greater flexibility for custom SiC power-module development. AEC-Plus–grade SiC devices are qualified to standards that exceed conventional AEC-Q101 and JEDEC requirements.

To request samples of the ultra-high-voltage SiC MOSFETs, contact Navitas at info@navitassemi.com.

Navitas Semiconductor 

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